Structural, electrical and optical properties of samarium fluoride doped SnO2 transparent conducting oxide thin films for optoelectronic device applications



  • Dao Van Da Department of Electrical and Electronic Engineering, Hung Yen University of Technology and Education, Vietnam
  • Tran Quang Phu (Corresponding Author) Department of Electrical and Electronic Engineering, Hung Yen University of Technology and Education, Vietnam
  • Pham Van Hoi Institute of Materials Science, Vietnam Academy of Science and Technology



Samarium fluoride co-doped tin oxide films; Transparent conducting oxide (TCO); Sol–gel dip-coating; Electrical resistivity; p-type TCO.


In this study, p-type transparent tin oxide (SnO2) based semiconductor thin films were deposited onto glass substrates by sol-gel dip-coating method using samarium-trifluoride (SmF3) as acceptor dopant. The films were prepared by co-doping 2 mol.% of SmF3 into SnO2 (SFTO), followed by annealing temperature at 475 °C. XRD analysis results showed that the films exhibited the tetragonal rutile SnO2 phase. The p-type conductance of the SFTO films were confimed by Hall effect and Seebeck coefficient measurements. Resistivity and mobility of the SmF3 doped SnO2 film is 7.83 × 10–3Wcm and 7.57 cm2 V–1 s–1, respectively, which reduce in comparing with those of un-doped SnO2 film. Carrier concentration is large increase from –9.34 ´ 1018 cm–3 for un-doped- to +1.05 × 1020 cm–3  for SmF3 doped-SnO2 film. The p-type SFTO film showed a high transmittance of 74.3% at 550 nm, with band gap energy of 3.63 eV. Furthermore, a transparent p-SnO2:SmF3/n-ZnO:Al (Al doping level of 2 mol.%) heterojunction was fabricated on alkali-free glass substrates. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 1.55 V. With obtained properties, the p-type SFTO film holds great promise for optoelectronic devices applications.


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How to Cite

Dao, V.-D., Q.-P. Tran, and V.-H. Pham. “Structural, Electrical and Optical Properties of Samarium Fluoride Doped SnO2 Transparent Conducting Oxide Thin Films for Optoelectronic Device Applications”. Journal of Military Science and Technology, vol. 88, no. 88, June 2023, pp. 123-30, doi:10.54939/1859-1043.j.mst.88.2023.123-130.



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