Design of a dual-band microwave power amplifier for wireless communications
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https://doi.org/10.54939/1859-1043.j.mst.79.2022.10-21Keywords:
Dual-band power amplifier; MMIC; Diplexer; Harmonic suppression.Abstract
In this paper, we present a design of a concurrent dual-band power amplifier operating at 5.8 GHz and 9.4 GHz employing a MMIC technology for wireless communications. The active device used is a 0.25 µm AlGaN/GaN HEMT from WIN Semiconductor, Taiwan. The design goal is to achieve the high-efficiency while still retaining other important metrics including output power and power Gain at concurrent dual frequency bands. The performance of the designed amplifier is evaluated at both small and large signal levels through theoretical analyses and simulation using a Keysight ADS simulator. The developed dual-band amplifier delivered a 47% PAE with 30.5 dBm output power and 12.5 Gain at 5.8 GHz, and a 37% PAE with 30.2 dBm output power and 12.2 Gain at 9.4 GHz.
References
[1]. F. H. Raab, ‘Class-F power amplifiers with maximally flat waveforms’, IEEE Trans. Microw. Theory Techn., Vol. 45, No. 11, 2007–2012, 2007.
[2]. N.O. Sokal, A.D. Sokal, ‘Class E - A new class of high-efficiency tuned single-ended switching power amplifiers’, IEEE J. Solid-State Circuits, Vol. SSC-10, No. 3, 168–176, 1975.
[3]. Peter Wright, Jonathan Lees, Johannes Benedikt, Paul J. Tasker, Steve C. Cripps, ‘A methodology for realizing high efficiency class-J in a linear and broadband PA’, IEEE Trans. Microw. Theory Techn., Vol. 57, No. 12, 3196–3204, 2009.
[4]. Masahiro Kamiyama, Ryo Ishikawa, Kazuhiko Honjo, ‘5.65 GHz high-efficiency GaN HEMT power amplifier with harmonics treatment up to fourth order’, IEEE Microw. Wireless Compon. Lett., Vol. 22, No.6, 315–317, 2012.
[5]. Enomoto, J., Ishikawa, R., and Honjo, K., ‘Second harmonic treatment technique for bandwidth enhancement of GaN HEMT amplifier with harmonic reactive terminations’, IEEE Trans. Microw. Theory Techn., Vol. 65, No. 12, 4947–4952 pp, 2017.
[6]. K. Rawat, F.M. Ghannouchi, ‘Dual-band matching technique based on dual-characteristic impedance transformers for dual-band power amplifiers design’, IET Microw., Antennas Propag., Vol. 5, No. 14, 1720–1729 pp, 2011.
[7]. Seung Hun Ji, Choon Sik Cho, Jae W. Lee, Jaeheung Kim, ‘Concurrent dual-band class-E power amplifier using composite right/left-handed transmission lines’, IEEE Trans. Microw. Theory Techn., Vol, 55, No. 6, 1341–1347 pp, 2007.
[8]. Jun Enomoto, Ryo Ishikawa, Kazuhiko Honjo, ‘A 2.1/2.6 GHz dual-band high-efficiency GaN HEMT amplifier with harmonic reactive terminations’, Proc. European Microw. Conf., 1488–1491 pp, 2014.
[9]. Yoichiro Takayama,Koji Uchida,Takayuki Fujita,Kazusuke Maenaka, ‘Microwave dual-band power amplifiers using two-frequency matching’, Electron. Commun. Jpn Part II Electron., Vol. 89, No. 5 17-24 pp, 2006.
[10]. Ryo Ishikawa, Yoichiro Takayama, Kazuhiko Honjo, ‘Concurrent Dual-Band Access GaN HEMT MMIC Amplifier Suppressing Inter-Band Interference’, IEEE MTT-S Int. Microw. Symp. Dig., 2045–2048 pp, 2017.
[11]. R. Quaglia, V. Camarchia, and M. Pirola, ‘Dual-band GaN MMIC power amplifier for microwave backhaul applications’, IEEE Microw. Wireless Compon. Lett., Vol. 24, No. 6, 409–411 pp, 2014.
[12]. Chunshuang Xie,Peng Wu,Yang Yuan,Jialong Zeng,Cheng Tan,Zhongjun Yu, ‘A 5.5/12.5-GHz concurrent dual-band power amplifier MMIC in 0.25 μm GaAs technology’, Electronics Letters, 2022.
[13]. R. Ishikawa, ‘Anti-Interference Circuit Configuration for Concurrent Dual Band Operation in High-Efficiency GaN HEMT Power Amplifier’, Progress In Electromagnetics Research, 2019.
